Wafer-Level Hysteresis-Free Resonant Carbon Nanotube Transistors

We report wafer-level fabrication of resonant-body, carbon nanotube (CNT)field-effect transistors (FETs) in a dual-gate configuration. An integration density of >10(6) CNTFETs/cm(2), an assembly yield of >80%, and nanoprecision have been simultaneously obtained. Through combined chemical and thermal treatments, hysteresis-free (in vacuum) suspended-body CNTFETs have been demonstrated. Electrostatic actuation by lateral gate and FET-based readout of mechanical-resonance have been achieved at room temperature. Both upward and downward in situ frequency tuning has been experimentally demonstrated in the dual-gate architecture. The minuscule mass, high resonance frequency, and in situ tunability of the resonant CNTFETs offer promising features for applications in radio frequency signal processing and ultrasensitive sensing.


Publié dans:
Acs Nano, 9, 3, 2836-2842
Année
2015
Publisher:
Washington, Amer Chemical Soc
ISSN:
1936-0851
Mots-clefs:
Laboratoires:




 Notice créée le 2015-05-29, modifiée le 2019-12-05


Évaluer ce document:

Rate this document:
1
2
3
 
(Pas encore évalué)