Fabrication and performance of 1.3-mu m 10-Gb/s CWDM wafer-fused VCSELs grown by MOVPE

Recent progress in the fabrication and performance of 1.3-mu m 10-Gb/s, low power consumption wafer-fused VCSELs grown by MOVPE under nitrogen atmosphere are presented and discussed. By optimization of the growth conditions and implementation of a cavity adjustment technique, the wavelength yield was increased to up to 70% for all four coarse wavelength division multiplexing (CWDM) channels implemented. It was demonstrated that single-mode devices can have threshold and operation currents below 1 and 7 mA, respectively, in the full 0-80 degrees C temperature range. The reproducibility of the fabrication process and prospects for enhancing performance and yield of such VCSELs are also discussed. (C) 2014 Elsevier B.V. All rights reserved.


Published in:
Journal Of Crystal Growth, 414, 210-214
Year:
2015
Publisher:
Amsterdam, Elsevier Science Bv
ISSN:
0022-0248
Keywords:
Laboratories:




 Record created 2015-05-29, last modified 2018-03-17


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