000208287 001__ 208287
000208287 005__ 20180913063125.0
000208287 0247_ $$2doi$$a10.1109/Ted.2015.2397394
000208287 02470 $$2ISI$$a000351753900021
000208287 037__ $$aARTICLE
000208287 245__ $$aModeling Minority Carriers Related Capacitive Effects for Transient Substrate Currents in Smart Power ICs
000208287 269__ $$a2015
000208287 260__ $$aPiscataway$$bInstitute of Electrical and Electronics Engineers$$c2015
000208287 300__ $$a8
000208287 336__ $$aJournal Articles
000208287 520__ $$aThis paper presents an extended model for transient and ac circuit-level simulation of minority carriers propagation through the substrate of smart power integrated circuits (ICs). A p-n junction and a diffusion resistor with capacitive components are proposed to efficiently simulate transient parasitic coupled currents in high-power stages. From a general chip layout, an equivalent substrate network including capacitive effects (junction and diffusion capacitances) can be extracted and parasitic bipolar transistor can be simulated for the first time in transient operation by circuit simulators once the minority carriers continuity conditions are satisfied. This paper shows simulation results of the implemented models in good agreement with those obtained from technology computer-aided design. This implies that transient layout dependent mechanisms between high-voltage aggressor wells and low-voltage victims can be verified in early stages of IC design flow.
000208287 6531_ $$aBipolar transistors
000208287 6531_ $$aminority carriers
000208287 6531_ $$apower semiconductor devices
000208287 6531_ $$asmart power integrated circuit (IC)
000208287 6531_ $$asubstrate noise
000208287 700__ $$0246994$$aStefanucci, Camillo$$g206323
000208287 700__ $$0246408$$aBuccella, Pietro$$g163217
000208287 700__ $$0240539$$aKayal, Maher$$g105540
000208287 700__ $$0241224$$aSallese, Jean-Michel$$g106334
000208287 773__ $$j62$$k4$$q1215-1222$$tIEEE Transactions on Electron Devices
000208287 909C0 $$0252315$$pELAB$$xU11978
000208287 909C0 $$0252605$$pEDLAB
000208287 909CO $$ooai:infoscience.tind.io:208287$$pSTI$$particle
000208287 917Z8 $$x105540
000208287 917Z8 $$x144315
000208287 937__ $$aEPFL-ARTICLE-208287
000208287 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000208287 980__ $$aARTICLE