Increasing single mode power of 13-μm VCSELs by output coupling optimization

We report on the single mode emission power enhancement of 1.3-mu m VCSELs by adjusting the reflectivity of the top GaAs-based DBR for output coupling optimization using selective removal of Bragg reflector layers. Devices with record single mode power of 6.8-mW at room temperature and 2.8-mW at 80 degrees C, with more than 30 dB single mode suppression ratio, have been obtained. (C) 2015 Optical Society of America


Published in:
Optics Express, 23, 9, 10900
Year:
2015
Publisher:
Washington, Optical Society of America
ISSN:
1094-4087
Laboratories:




 Record created 2015-05-12, last modified 2018-09-13


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