000207443 001__ 207443
000207443 005__ 20180913063057.0
000207443 0247_ $$2doi$$a10.1109/TED.2015.2465149
000207443 022__ $$a0018-9383
000207443 02470 $$2ISI$$a000361684000038
000207443 037__ $$aARTICLE
000207443 245__ $$aCarrier Mobility Extraction Methodology in Junctionless and Inversion-Mode FETs
000207443 260__ $$aPiscataway$$bInstitute of Electrical and Electronics Engineers$$c2015
000207443 269__ $$a2015
000207443 300__ $$a6
000207443 336__ $$aJournal Articles
000207443 520__ $$aIn this paper, we propose a new method to extract  the free carrier mobility in junctionless (JL) double-gate FETs  biased in accumulation. We show that, in addition to assuming a  well-defined field-dependent mobility law, using the well-known  Y-function is not accurate enough in JL FETs. In addition, the  new methodology is also interesting for inversion-mode FETs.  This approach has been assessed with technology computer-aided  design simulations, and confirms its robustness both for JL and  inversion-mode devices.
000207443 6531_ $$ananowire
000207443 6531_ $$ajunctionless FETs
000207443 6531_ $$amobility
000207443 6531_ $$aY-function
000207443 700__ $$0247158$$aJazaeri, Farzan$$g202103
000207443 700__ $$0241224$$aSallese, Jean-Michel$$g106334
000207443 773__ $$j62$$k10$$q3373-3378$$tIEEE Transactions on Electron Devices
000207443 909C0 $$0252605$$pEDLAB
000207443 909CO $$ooai:infoscience.tind.io:207443$$pSTI$$particle
000207443 917Z8 $$x202103
000207443 917Z8 $$x202103
000207443 917Z8 $$x144315
000207443 937__ $$aEPFL-ARTICLE-207443
000207443 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000207443 980__ $$aARTICLE