000205383 001__ 205383
000205383 005__ 20180317093419.0
000205383 0247_ $$2doi$$a10.1002/adem.201400060
000205383 022__ $$a1438-1656
000205383 02470 $$2ISI$$a000347305300010
000205383 037__ $$aARTICLE
000205383 245__ $$aInfluence of a Nanometric Al2O3 Interlayer on the Thermal Conductance of an Al/(Si, Diamond) Interface
000205383 269__ $$a2015
000205383 260__ $$aWeinheim$$bWiley-Blackwell$$c2015
000205383 300__ $$a8
000205383 336__ $$aJournal Articles
000205383 520__ $$aThe effect of an Al2O3 interlayer on the thermal conductance of metal (Al)/non-metal (diamond and silicon) interfaces is investigated using Time Domain ThermoReflectance (TDTR). Interlayers between 1.7 and 20nm are deposited on oxygen-terminated diamond and hydrogen-terminated silicon substrates using atomic layer deposition (ALD). Their overall conductance is then measured at temperatures ranging from 78 to 290K. The contributions of the interlayer bulk and its interfaces with both substrate and metallic overlayer are then separated. Values thus obtained for the bulk interlayer conductivity are comparable with existing data, reaching 1.25Wm(-1)K(-1) at 290K. Interface contributions are shown to be very similar to the values obtained when a single Al/substrate interface is investigated, suggesting that interfacial oxides may govern TBC independently of the interlayer's thickness.
000205383 700__ $$0242401$$aMonachon, Christian$$g161126
000205383 700__ $$0240158$$aWeber, Ludger$$g115064
000205383 773__ $$j17$$k1$$q68-75$$tAdvanced Engineering Materials
000205383 8564_ $$s5434221$$uhttps://infoscience.epfl.ch/record/205383/files/manuscript_AEM_final.pdf$$yn/a$$zn/a
000205383 909CO $$ooai:infoscience.tind.io:205383$$particle$$pSTI
000205383 909C0 $$0252448$$pIMX$$xU10330
000205383 917Z8 $$x115064
000205383 917Z8 $$x112836
000205383 937__ $$aEPFL-ARTICLE-205383
000205383 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000205383 980__ $$aARTICLE