000205271 001__ 205271
000205271 005__ 20180913062958.0
000205271 020__ $$a978-83-63578-04-6
000205271 02470 $$2ISI$$a000345852100008
000205271 037__ $$aCONF
000205271 245__ $$aCompact Modeling of Homojunction Tunnel FETs
000205271 260__ $$bIEEE$$c2014$$aNew York
000205271 269__ $$a2014
000205271 300__ $$a4
000205271 336__ $$aConference Papers
000205271 520__ $$aAggressive scaling of the supply voltage reduces the energy needed for switching of standard CMOS devices. However, advanced CMOS technologies are facing two main problems that consequently lead to higher power consumption: the complexity of a further supply voltage reduction, and the rising leakage currents that directly affect the switching ratio between the ON and OFF states. At present, the available field-effect transistors (FETs) in the CMOS integrated circuits require at room temperature at least 60 mV of gate voltage to increase the current by one order of magnitude. Recent publications have highlighted the need for alternative devices providing better ON-OFF switching performance. Tunneling FETs are very promising devices to respond to the demanding requirements of future scaled silicon technology nodes. The paper reviews recent compact modeling of homojunction TFET devices.
000205271 6531_ $$aTunell FET
000205271 6531_ $$aCompact Modelng
000205271 6531_ $$aVerlog-A
000205271 700__ $$0244769$$g198278$$aBiswas, Arnab
000205271 700__ $$aDagtekin, Nilay
000205271 700__ $$0246495$$g200191$$aAlper, Cem
000205271 700__ $$0244760$$g174139$$aDe Michielis, Luca
000205271 700__ $$0242727$$g199069$$aBazigos, Antonios
000205271 700__ $$aGrabinski, Wladek
000205271 700__ $$0241430$$g122431$$aIonescu, Adrian
000205271 7112_ $$a21st International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES)', u'21st International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES)
000205271 720_1 $$aNapieralski, A$$eed.
000205271 773__ $$t2014 Proceedings Of The 21St International Conference On Mixed Design Of Integrated Circuits & Systems (Mixdes)$$q54-57
000205271 909C0 $$xU10328$$0252177$$pNANOLAB
000205271 909CO $$pconf$$pSTI$$ooai:infoscience.tind.io:205271
000205271 917Z8 $$x198278
000205271 937__ $$aEPFL-CONF-205271
000205271 973__ $$rREVIEWED$$sPUBLISHED$$aEPFL
000205271 980__ $$aCONF