000205270 001__ 205270
000205270 005__ 20190812205826.0
000205270 020__ $$a978-1-4799-4994-6
000205270 02470 $$2ISI$$a000345737400087
000205270 037__ $$aCONF
000205270 245__ $$aImpact of enhanced contact doping on minority carriers diffusion currents
000205270 260__ $$bIEEE$$c2014$$aNew York
000205270 269__ $$a2014
000205270 300__ $$a4
000205270 336__ $$aConference Papers
000205270 520__ $$aMinority carriers diffusion currents are particularly important in parasitic substrate couplings of Smart Power ICs. In CMOS technologies the P-substrate potential is imposed by P+ contacts and N-wells by N+ highly doped implantations. The doping concentration discontinuity of these contact regions can have a big impact on parasitic diffusion currents of minority carriers. This work gives a description of these effects by device physical simulations of PN junctions under different injection levels of minority carriers. The perturbation of boundary conditions for electrons diffusion is also studied inside the substrate bulk in case a highly-doped substrate is used for high-voltage technologies.
000205270 700__ $$0246994$$g206323$$aStefanucci, Camillo
000205270 700__ $$0246408$$g163217$$aBuccella, Pietro
000205270 700__ $$0240539$$g105540$$aKayal, Maher
000205270 700__ $$0241224$$g106334$$aSallese, Jean-Michel
000205270 7112_ $$dJUN 29-JUL 03, 2014$$cGrenoble, FRANCE$$a10th Conference on PhD Research in Microelectronics and Electronics (PRIME)
000205270 773__ $$t2014 10Th Conference on Ph.D. Research In Microelectronics And Electronics (Prime 2014)
000205270 909C0 $$xU11978$$pELAB$$0252315
000205270 909C0 $$pEDLAB$$0252605
000205270 909CO $$pconf$$pSTI$$ooai:infoscience.tind.io:205270
000205270 917Z8 $$x105540
000205270 917Z8 $$x144315
000205270 937__ $$aEPFL-CONF-205270
000205270 973__ $$rREVIEWED$$sPUBLISHED$$aEPFL
000205270 980__ $$aCONF