Fault Modeling in Controllable Polarity Silicon Nanowire Circuits

Controllable polarity silicon nanowire transistors are among the promising candidates to replace current CMOS in the near future owing to their superior electrostatic characteristics and advanced functionalities. From a circuit testing point of view, it is unclear if the current CMOS and Fin-FET fault models are comprehensive enough to model all defects of controllable polarity nanowires. In this paper, we deal with the above problem using inductive fault analysis on <em>three-independent-gate silicon nanowire FETs</em>. Simulations revealed that the current fault models, i.e. stuck-open faults, are insufficient to cover all modes of operation. The newly introduced test algorithm for stuck open can adequately capture the malfunction behavior of controllable polarity logic gates in the presence of nanowire break and bridge on polarity terminals.


Published in:
Proceedings of the Design, Automation & Test in Europe (DATE 2015), 453-458
Presented at:
Design, Automation & Test in Europe (DATE 2015), Grenoble, France, March 9-13, 2015
Year:
2015
Publisher:
IEEE
ISBN:
978-3-9815-3704-8
Laboratories:




 Record created 2015-01-08, last modified 2018-09-13

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