High performance wafer-fused semiconductor disk lasers emitting in the 1300 nm waveband

We report for the first time on the performance of 1300 nm waveband semiconductor disc lasers (SDLs) with wafer fused gain mirrors that implement intracavity diamond and flip-chip heat dissipation schemes based on the same gain material. With a new type of gain mirror structure, maximum output power values reach 7.1 W with intracavity diamond gain mirrors and 5.6 W with flip-chip gain mirrors, using a pump spot diameter of 300 μm, exhibiting a beam quality factor M2<1.25 in the full operation range. These results confirm previously published theoretical modeling of these types of SDLs. © 2014 Optical Society of America.


Published in:
Optics Express, 22, 24, 29398
Year:
2014
Publisher:
Optical Society of America
ISSN:
1094-4087
Laboratories:




 Record created 2014-12-15, last modified 2018-09-13


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