000203374 001__ 203374
000203374 005__ 20181203023706.0
000203374 0247_ $$2doi$$a10.1088/0957-4484/19/33/335603
000203374 022__ $$a09574484
000203374 037__ $$aARTICLE
000203374 245__ $$aGrowth of one-dimensional Si/SiGe heterostructures by thermal CVD
000203374 260__ $$c2008
000203374 269__ $$a2008
000203374 336__ $$aJournal Articles
000203374 520__ $$aThe first results on a simple new process for the direct fabrication of one-dimensional superlattices using common CVD chambers are presented. The experiments were carried out in a 200 mm industrial Centura reactor (Applied Materials). Low dimensionality and superlattices allow a significant increase in the figure of merit of thermoelectrics by controlling the transport of phonons and electrons. The monocrystalline nanowires produced according to this process are both one-dimensional and present heterostructures, with very thin layers (40 nm) of Si and SiGe. Concentrations up to 30 at.% Ge were obtained in the SiGe parts. Complementary techniques including transmission electronic microscopy (TEM), selected area electron diffraction (SAED), energy dispersive x-ray spectroscopy (EDS), scanning transmission electron microscopy (STEM) in bright field and high angle annular dark field (HAADF STEM), and energy-filtered transmission electron microscopy (EF-TEM) were used to characterize the nanoheterostructures. © IOP Publishing Ltd.
000203374 6531_ $$aApplied Materials (CO)
000203374 6531_ $$aarticle
000203374 6531_ $$aBright-field (BF)
000203374 6531_ $$aChemical vapor deposition
000203374 6531_ $$aComplementary techniques
000203374 6531_ $$aCrystals
000203374 6531_ $$aDirect fabrication
000203374 6531_ $$aElectric wire
000203374 6531_ $$aElectronic microscopy
000203374 6531_ $$aElectron microscopes
000203374 6531_ $$aElectrons
000203374 6531_ $$aelectron transport
000203374 6531_ $$aEnergy dispersive X ray spectroscopy
000203374 6531_ $$aEnergy dispersive X ray spectroscopy (EDXS)
000203374 6531_ $$aEnergy filtered transmission electron microscopy
000203374 6531_ $$aEnergy filtered transmission electron microscopy (EFTEM)
000203374 6531_ $$aFigure-of-merit (FoM)
000203374 6531_ $$aGermanium
000203374 6531_ $$aHAADF STEM
000203374 6531_ $$aHeterostructures
000203374 6531_ $$aHigh angle annular dark field (HAADF)
000203374 6531_ $$ahigh angle annular dark field scanning transmission electron microscopy
000203374 6531_ $$aLow dimensionality
000203374 6531_ $$aMaterials science
000203374 6531_ $$aMeasurement theory
000203374 6531_ $$aMonocrystalline (MD)
000203374 6531_ $$amonocrystalline nanowire
000203374 6531_ $$aNano-heterostructures
000203374 6531_ $$ananomaterial
000203374 6531_ $$aNanostructured materials
000203374 6531_ $$ananowire
000203374 6531_ $$aNew processes
000203374 6531_ $$aOne-dimensional
000203374 6531_ $$aOne dimensional superlattices
000203374 6531_ $$aOptical design
000203374 6531_ $$aphonon
000203374 6531_ $$aPotassium compounds
000203374 6531_ $$apriority journal
000203374 6531_ $$ascanning electron microscopy
000203374 6531_ $$ascanning transmission electron microscopy
000203374 6531_ $$aScanning Transmission Electron Microscopy (STEM)
000203374 6531_ $$aselected area electron diffraction
000203374 6531_ $$aSelected area electron diffraction (SAED)
000203374 6531_ $$aSemiconducting germanium compounds
000203374 6531_ $$aSemiconducting silicon compounds
000203374 6531_ $$aSilicon
000203374 6531_ $$aSilicon alloys
000203374 6531_ $$asilicon germanium
000203374 6531_ $$aSuperlattices
000203374 6531_ $$aThin layering
000203374 6531_ $$aTransmission electron microscopy
000203374 700__ $$aMouchet, C.
000203374 700__ $$aLatu-Romain, L.
000203374 700__ $$0248450$$aCayron, C.$$g112215
000203374 700__ $$aRouviere, E.
000203374 700__ $$aCelle, C.
000203374 700__ $$aSimonato, J.-P.
000203374 773__ $$j19$$tNanotechnology
000203374 909C0 $$0252516$$pLMTM$$xU12903
000203374 909CO $$ooai:infoscience.tind.io:203374$$pSTI$$particle
000203374 937__ $$aEPFL-ARTICLE-203374
000203374 973__ $$aOTHER$$rREVIEWED$$sPUBLISHED
000203374 980__ $$aARTICLE