Growth of one-dimensional Si/SiGe heterostructures by thermal CVD
The first results on a simple new process for the direct fabrication of one-dimensional superlattices using common CVD chambers are presented. The experiments were carried out in a 200 mm industrial Centura reactor (Applied Materials). Low dimensionality and superlattices allow a significant increase in the figure of merit of thermoelectrics by controlling the transport of phonons and electrons. The monocrystalline nanowires produced according to this process are both one-dimensional and present heterostructures, with very thin layers (40 nm) of Si and SiGe. Concentrations up to 30 at.% Ge were obtained in the SiGe parts. Complementary techniques including transmission electronic microscopy (TEM), selected area electron diffraction (SAED), energy dispersive x-ray spectroscopy (EDS), scanning transmission electron microscopy (STEM) in bright field and high angle annular dark field (HAADF STEM), and energy-filtered transmission electron microscopy (EF-TEM) were used to characterize the nanoheterostructures. © IOP Publishing Ltd.
Keywords: Applied Materials (CO) ; article ; Bright-field (BF) ; Chemical vapor deposition ; Complementary techniques ; Crystals ; Direct fabrication ; Electric wire ; Electronic microscopy ; Electron microscopes ; Electrons ; electron transport ; Energy dispersive X ray spectroscopy ; Energy dispersive X ray spectroscopy (EDXS) ; Energy filtered transmission electron microscopy ; Energy filtered transmission electron microscopy (EFTEM) ; Figure-of-merit (FoM) ; Germanium ; HAADF STEM ; Heterostructures ; High angle annular dark field (HAADF) ; high angle annular dark field scanning transmission electron microscopy ; Low dimensionality ; Materials science ; Measurement theory ; Monocrystalline (MD) ; monocrystalline nanowire ; Nano-heterostructures ; nanomaterial ; Nanostructured materials ; nanowire ; New processes ; One-dimensional ; One dimensional superlattices ; Optical design ; phonon ; Potassium compounds ; priority journal ; scanning electron microscopy ; scanning transmission electron microscopy ; Scanning Transmission Electron Microscopy (STEM) ; selected area electron diffraction ; Selected area electron diffraction (SAED) ; Semiconducting germanium compounds ; Semiconducting silicon compounds ; Silicon ; Silicon alloys ; silicon germanium ; Superlattices ; Thin layering ; Transmission electron microscopy
Record created on 2014-11-14, modified on 2016-08-09