Al catalyzed growth of silicon nanowires and subsequent in situ dry etching of the catalyst for photovoltaic application
Aluminum-catalyzed epitaxial growth of silicon nanowire (SiNW) arrays was performed on Si wafer by chemical vapor deposition at 600°C. The arrays showed a low optical total reflectance in the visible light spectrum, with a minimum of 2% around 450nm wavelength. Following SiNW growth, dry etching of the Al catalyst was performed in situ using HCl chemistry at 600°C. The effectiveness of aluminum etching was assessed by energy dispersive X-ray spectroscopy, by high resolution transmission electron microscopy and by a controlled growth experiment. This SiNW array growth and subsequent catalyst dry etching opens up the possibility of an all in vacuum fabrication process of radial junction solar cells. Al catalyst dry etching following growth using HCl gas at 600°C. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Keywords: Al catalyst ; Aluminum ; Aluminum coatings ; Aluminum etching ; Catalysis ; catalyst dry etching ; Catalysts ; Chemical vapor deposition ; Controlled growth ; CVD ; Dry etching ; Energy dispersive X ray spectroscopy ; Epitaxial growth ; Fabrication process ; HCl gas ; High resolution electron microscopy ; High resolution transmission electron microscopy ; In-situ ; In-vacuum ; Nanowires ; Photovoltaic applications ; Plasma etching ; Semiconducting silicon compounds ; Silicon nanowires ; Silicon wafers ; Si wafer ; Total reflectance ; Transmission electron microscopy ; Visible light ; VLS ; X ray spectroscopy
Record created on 2014-11-14, modified on 2016-08-09