000203226 001__ 203226
000203226 005__ 20180913062837.0
000203226 0247_ $$2doi$$a10.1063/1.4895807
000203226 022__ $$a0003-6951
000203226 02470 $$2ISI$$a000342995800036
000203226 037__ $$aARTICLE
000203226 245__ $$aThermal stability and in situ SiN passivation of InAlN/GaN high electron mobility heterostructures
000203226 260__ $$aMelville$$bAmer Inst Physics$$c2014
000203226 269__ $$a2014
000203226 300__ $$a4
000203226 336__ $$aJournal Articles
000203226 520__ $$aWe investigate the thermal stability of nearly lattice-matched InAlN layers under metal organic vapor phase epitaxy conditions for temperatures >800 degrees C and show that they are not fully stable. In particular, InAlN top layers undergo degradation during high temperature annealing due to a surface related process, which causes the loss of crystal quality. This strongly impacts the transport properties of InAlN/GaN HEMT heterostructures; in particular, the mobility is significantly reduced. However, we demonstrate that high thermal stability can be achieved by capping with a GaN layer as thin as 0.5 nm. Those findings enabled us to realize in situ passivated HEMT heterostructures with state of the art transport properties. (c) 2014 AIP Publishing LLC.
000203226 700__ $$0245323$$aLugani, L.$$g208426
000203226 700__ $$0240056$$aCarlin, J-F$$g104706
000203226 700__ $$aPy, M. A.
000203226 700__ $$0244550$$aGrandjean, N.$$g161577
000203226 773__ $$j105$$k11$$tApplied Physics Letters
000203226 909C0 $$0252312$$pLASPE$$xU10946
000203226 909CO $$ooai:infoscience.tind.io:203226$$pSB$$particle
000203226 917Z8 $$x161577
000203226 937__ $$aEPFL-ARTICLE-203226
000203226 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000203226 980__ $$aARTICLE