Journal article

Modelling Channel Thermal Noise and Induced Gate Noise in Junctionless FETs

This brief presents analytical expressions for channel and induced gate thermal noise in long channel Junctionless Double Gate MOSFET. The analytical relationships, which have been derived from a coherent charge based model, are fully validated with Technology Computer Aided Design simulations and the figures of merit have been further compared with inversion mode FETs. For a given current, we found that the channel thermal noise is very similar for both architectures, whereas the induce gate noise is slightly decreased in Junctionless FETs.


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