Low-temperature plasma-deposited silicon epitaxial films: Growth and properties

Low-temperature (<= 200 degrees C) epitaxial growth yields precise thickness, doping, and thermal-budget control, which enables advanced-design semiconductor devices. In this paper, we use plasma-enhanced chemical vapor deposition to grow homo-epitaxial layers and study the different growth modes on crystalline silicon substrates. In particular, we determine the conditions leading to epitaxial growth in light of a model that depends only on the silane concentration in the plasma and the mean free path length of surface adatoms. For such growth, we show that the presence of a persistent defective interface layer between the crystalline silicon substrate and the epitaxial layer stems not only from the growth conditions but also from unintentional contamination of the reactor. Based on our findings, we determine the plasma conditions to grow high-quality bulk epitaxial films and propose a two-step growth process to obtain device-grade material. (C) 2014 AIP Publishing LLC.


Published in:
Journal Of Applied Physics, 116, 5
Year:
2014
Publisher:
Melville, American Institute of Physics
ISSN:
0021-8979
Note:
IMT-NE Number : 768
Laboratories:


Note: The status of this file is: EPFL only


 Record created 2014-10-23, last modified 2018-03-17

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