000202358 001__ 202358
000202358 005__ 20181203023631.0
000202358 0247_ $$2doi$$a10.1109/Jssc.2014.2323352
000202358 022__ $$a0018-9200
000202358 02470 $$2ISI$$a000341564200008
000202358 037__ $$aARTICLE
000202358 245__ $$aA Low-Power Low-Cost 24 GHz RFID Tag With a C-Flash Based Embedded Memory
000202358 260__ $$bInstitute of Electrical and Electronics Engineers$$c2014$$aPiscataway
000202358 269__ $$a2014
000202358 300__ $$a16
000202358 336__ $$aJournal Articles
000202358 520__ $$aThe key factor in widespread adoption of Radio Frequency Identification (RFID) technology is tag cost minimization. This paper presents the first low-cost, ultra-low power, passive RFID tag, fully integrated on a single substrate in a standard CMOS process. The system combines a 24 GHz, dual on-chip antenna, RF front-end, and a C-Flash based, rewritable, non-volatile memory module to achieve full on-chip system integration. The complete system was designed and fabricated in the TowerJazz 0.18 mu m CMOS technology without any additional mask adders. By embedding the RF, memory, and digital components together upon a single substrate in a standard digital process, the low-cost aspirations of the "5-cent RFID tag" become feasible. Design considerations, analysis, circuit implementations, and measurement results are presented. The entire system was fabricated on a 3.6 mm x 1.6 mm (6.9 mm(2)) die with the integrated antennas comprising 82% of the silicon area. The total read power was measured to be 13.2 mu W, which is sufficiently supplied by the on-chip energy harvesting unit.
000202358 6531_ $$aC-Flash
000202358 6531_ $$alow-cost
000202358 6531_ $$alow-power
000202358 6531_ $$anon-volatile memory
000202358 6531_ $$aon-chip antenna
000202358 6531_ $$aradio frequency identification
000202358 6531_ $$aRFIC
000202358 6531_ $$aRFID tags
000202358 700__ $$uBen Gurion Univ Negev, VLSI Syst Ctr, IL-84105 Beer Sheva, Israel$$aDagan, Hadar
000202358 700__ $$aShapira, Aviv
000202358 700__ $$uBen Gurion Univ Negev, VLSI Syst Ctr, IL-84105 Beer Sheva, Israel$$aTeman, Adam
000202358 700__ $$uBar Ilan Univ, Fac Engn, IL-5290002 Ramat Gan, Israel$$aMordakhay, Anatoli
000202358 700__ $$uTel Aviv Univ, Sch Elect Engn, IL-69978 Tel Aviv, Israel$$aJameson, Samuel
000202358 700__ $$aPikhay, Evgeny
000202358 700__ $$aDayan, Vladislav
000202358 700__ $$aRoizin, Yakov
000202358 700__ $$uTel Aviv Univ, Sch Elect Engn, IL-69978 Tel Aviv, Israel$$aSocher, Eran
000202358 700__ $$aFish, Alexander
000202358 773__ $$j49$$tIeee Journal Of Solid-State Circuits$$k9$$q1942-1957
000202358 909C0 $$xU12395$$0252398$$pTCL
000202358 909CO $$pSTI$$particle$$ooai:infoscience.tind.io:202358
000202358 917Z8 $$x194090
000202358 917Z8 $$x148230
000202358 937__ $$aEPFL-ARTICLE-202358
000202358 973__ $$rREVIEWED$$sPUBLISHED$$aOTHER
000202358 980__ $$aARTICLE