Study of Fin-Tunnel FETs with doped pocket as Capacitor-less 1T DRAM
2014
Details
Title
Study of Fin-Tunnel FETs with doped pocket as Capacitor-less 1T DRAM
Author(s)
Biswas, Arnab ; Ionescu, Mihai Adrian
Published in
Proceedings of the SOI-3D-Subthreshold Microelectronics Technology Unified Conference
Conference
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), San Francisco, California, USA, December 6-9, 2014
Date
2014
Publisher
IEEE
Laboratories
NANOLAB
Record Appears in
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > NANOLAB - Nanoelectronic Devices Laboratory
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Record creation date
2014-10-18