Study of Fin-Tunnel FETs with doped pocket as Capacitor-less 1T DRAM


Published in:
Proceedings of the SOI-3D-Subthreshold Microelectronics Technology Unified Conference
Presented at:
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), San Francisco, California, USA, December 6-9, 2014
Year:
2014
Publisher:
IEEE
Laboratories:




 Record created 2014-10-18, last modified 2018-03-17


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