A Schottky-Barrier Silicon FinFET with 6.0 mV/dec Subthreshold Slope over 5 Decades of Current
Zhang, Jian; De Marchi, Michele; Gaillardon, Pierre-Emmanuel; De Micheli, Giovanni
2014

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Abstract

In this paper, we demonstrate a steep Subthreshold Slope (SS) silicon FinFET with Schottky-barrier source/drain. The device shows a minimal SS of 3.4 mV/dec and an average SS of 6.0 mV/dec over 5 decades of current swing. Ultra-low leakage floor of 0.06 pA/μm is also achieved with high Ion/Ioff ratio of 107.

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Title A Schottky-Barrier Silicon FinFET with 6.0 mV/dec Subthreshold Slope over 5 Decades of Current
Author(s) Zhang, Jian ; De Marchi, Michele ; Gaillardon, Pierre-Emmanuel ; De Micheli, Giovanni
Published in Proceedings of the International Electron Devices Meeting (IEDM’14)
Pages 3.4.1-13.4.4
Conference International Electron Devices Meeting (IEDM’14), San Francisco, California, USA, December 15-17, 2014
Date 2014
DOI https://doi.org/10.1109/IEDM.2014.7047045
Laboratories LSI1
Record Appears in Scientific production and competences > I&C - School of Computer and Communication Sciences > IINFCOM > LSI1 - Integrated Systems Laboratory 1 (STI/IC)
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Record creation date 2014-09-30

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