000201784 001__ 201784
000201784 005__ 20180913062701.0
000201784 0247_ $$2doi$$a10.1109/TED.2014.2350483
000201784 022__ $$a1557-9646
000201784 02470 $$2ISI$$a000342909800015
000201784 037__ $$aARTICLE
000201784 245__ $$aCan 2D-Nanocrystals Extend the Lifetime of Floating-Gate Transistor Based Nonvolatile Memory?
000201784 269__ $$a2014
000201784 260__ $$aPiscataway$$bIeee-Inst Electrical Electronics Engineers Inc$$c2014
000201784 300__ $$a9
000201784 336__ $$aJournal Articles
000201784 520__ $$aConventional floating-gate (FG) transistors (made with Si/poly-Si) that form the building blocks of the widely employed nonvolatile flash memory technology face severe scaling challenges beyond the 12-nm node. In this paper, for the first time, a comprehensive evaluation of the FG transistor made from emerging nanocrystals in the form of 2-dimensional (2D) transition metal dichalcogenides (TMDs) and multilayer graphene (MLG) is presented. It is shown that TMD based 2D channel materials have excellent gate length scaling potential due to their atomic scale thicknesses. On the other hand, employing MLG as FG greatly reduces cell-to-cell interference and alleviates reliability concerns. Moreover, it is also revealed that TMD/MLG heterostructures enable new mechanism for improving charge retention, thereby allowing the effective oxide thickness of gate dielectrics to be scaled to a few nanometers. Thus, this work indicates that judiciously selected 2D-nanocrystals can significantly extend the lifetime of the FG-based memory cell.
000201784 6531_ $$aMoS2
000201784 6531_ $$aDichalcogenides
000201784 6531_ $$aFlash memory
000201784 700__ $$aCao, Wei
000201784 700__ $$aKang, Jiahao
000201784 700__ $$0245340$$aBertolazzi, Simone$$g211689
000201784 700__ $$0240306$$aKis, Andras$$g133331
000201784 700__ $$aBanerjee, Kaustav
000201784 773__ $$j61$$k10$$q3456-3464$$tIEEE Transactions on Electron Devices
000201784 8564_ $$s2499632$$uhttps://infoscience.epfl.ch/record/201784/files/IEEE%20Transactions%20on%20Electron%20Devices%20%282014%29%20Cao%20-%20Can%202D-Nanocrystals%20Extend%20the%20Lifetime%20of%20Floating-Gate%20Transistor%20Based.pdf$$yPublisher's version$$zPublisher's version
000201784 909C0 $$0252294$$pLANES$$xU11840
000201784 909CO $$ooai:infoscience.tind.io:201784$$pSTI$$particle
000201784 917Z8 $$x133331
000201784 937__ $$aEPFL-ARTICLE-201784
000201784 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000201784 980__ $$aARTICLE