Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

Improving the conductivity of earth-abundant transparent conductive oxides (TCOs) remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H-2)-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H-2-plasma treatment performed at a substrate temperature of 50 degrees C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.


Published in:
APL Materials, 2
Year:
2014
Publisher:
Melville, Amer Inst Physics
Note:
IMT-NE Number :748
Laboratories:




 Record created 2014-09-18, last modified 2018-01-28

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