Multiple Independent Gate FETs: How Many Gates Do We Need?

<em>Multiple Independent Gate Field Effect Transistors</em> (MIGFETs) are expected to push FET technology further into the semiconductor roadmap. In a MIGFET, supplementary gates either provide (i) enhanced conduction properties or (ii) more intelligent switching functions. In general, each additional gate also introduces a side implementation cost. To enable more efficient digital systems, MIGFETs must leverage their expressive power to realize complex logic circuits with few physical resources. Researchers face then the question: <em>How many gates do we need?</em> In this paper, we address the logic side of this question. We determine whether or not an increasing number of gates leads to more compact logic implementations. For this purpose, we de- velop a logic synthesis flow that intrinsically exploits a MIGFET switching function. Using simplified design assumptions and device/interconnect models, we synthesize MCNC benchmarks on 5 promising MIGFET devices, with number of gates ranging from 1 to 7. Experimental results evidence nontrivial area/delay/energy minima, located between 1 and 4 gates, depending on a MIGFET switching function and device/interconnect technology.


Published in:
Proceedings of the 20th Asia and South Pacific Design Automation Conference (ASP-DAC 2015), 243-248
Presented at:
20th Asia and South Pacific Design Automation Conference (ASP-DAC 2015), Chiba/Tokyo, Japan, January 19-22, 2015
Year:
2015
Publisher:
IEEE
ISBN:
978-1-4799-7790-1
Laboratories:




 Record created 2014-09-04, last modified 2018-01-28

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