000201517 001__ 201517
000201517 005__ 20181203023608.0
000201517 0247_ $$2doi$$a10.1364/OL.39.004855
000201517 022__ $$a1539-4794
000201517 02470 $$2ISI$$a000341099400057
000201517 037__ $$aARTICLE
000201517 245__ $$aHigh-power flip-chip semiconductor disk laser in the 1.3  μm wavelength band
000201517 260__ $$aWashington$$bOptical Soc Amer$$c2014
000201517 269__ $$a2014
000201517 300__ $$a4
000201517 336__ $$aJournal Articles
000201517 520__ $$aWe present 6.1 W of output power from a flip-chip semiconductor disk laser (SDL) emitting in the 1.3 mu m wavelength region. This is the first demonstration of a flip-chip SDL in this wavelength range with output powers that are comparable to those obtained with intracavity diamond heat spreaders. The flip-chip configuration circumvents the optical distortions and losses that the intracavity diamond heat spreaders can introduce into the laser cavity. This is essential for several key applications of SDLs. (C) 2014 Optical Society of America
000201517 700__ $$aRantamäki, Antti
000201517 700__ $$0242320$$aSirbu, Alexei$$g111197
000201517 700__ $$aSaarinen, Esa J.
000201517 700__ $$aLyytikäinen, Jari
000201517 700__ $$0241421$$aMereuta, Alexandru$$g151457
000201517 700__ $$0241422$$aIakovlev, Vladimir$$g125735
000201517 700__ $$0240239$$aKapon, Eli$$g105530
000201517 700__ $$aOkhotnikov, Oleg G.
000201517 773__ $$j39$$k16$$q4855$$tOptics Letters
000201517 909C0 $$0252035$$pLPN$$xU10158
000201517 909CO $$ooai:infoscience.tind.io:201517$$pSB$$particle
000201517 917Z8 $$x182258
000201517 917Z8 $$x182258
000201517 937__ $$aEPFL-ARTICLE-201517
000201517 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000201517 980__ $$aARTICLE