000201322 001__ 201322
000201322 005__ 20181203023604.0
000201322 0247_ $$2doi$$a10.1364/Oe.22.014441
000201322 022__ $$a1094-4087
000201322 02470 $$2ISI$$a000338044300039
000201322 037__ $$aARTICLE
000201322 245__ $$aHybrid MOS-PN photodiode with positive feedback for pulse-modulation imaging
000201322 260__ $$bOptical Society of America$$c2014$$aWashington
000201322 269__ $$a2014
000201322 300__ $$a9
000201322 336__ $$aJournal Articles
000201322 520__ $$aA new type of CMOS compatible photodetector, exhibiting intrinsic light-to-time conversion, is proposed. Its main objective is to start the time-to-digital conversion directly at its output, thereby avoiding the cumbersome analog processing. The operation starts with an internal charge integration, followed by a positive feedback, and a sharp switching-current. The device, consisting of a deeply depleted MOS structure controlling the conduction of a forward-based PN diode, is presented and its operation explained. TCAD simulations are used to show the effects of semiconductor parameters and bias conditions. The photodetector and its detection circuit are designed and fabricated in a 0.18 mu m CMOS process. Measurements of this new device under different biasing and illumination conditions show highly promising properties in terms of linearity, internal gain, and noise performances. (C) 2014 Optical Society of America
000201322 700__ $$0245510$$g175792$$aSallin, Denis
000201322 700__ $$aKoukab, Adil
000201322 700__ $$aKayal, Maher$$g105540$$0240539
000201322 773__ $$j22$$tOptics Express$$k12$$q14441-14449
000201322 909C0 $$xU11978$$0252315$$pELAB
000201322 909CO $$pSTI$$particle$$ooai:infoscience.tind.io:201322
000201322 917Z8 $$x105540
000201322 937__ $$aEPFL-ARTICLE-201322
000201322 973__ $$rREVIEWED$$sPUBLISHED$$aEPFL
000201322 980__ $$aARTICLE