Hybrid MOS-PN photodiode with positive feedback for pulse-modulation imaging

A new type of CMOS compatible photodetector, exhibiting intrinsic light-to-time conversion, is proposed. Its main objective is to start the time-to-digital conversion directly at its output, thereby avoiding the cumbersome analog processing. The operation starts with an internal charge integration, followed by a positive feedback, and a sharp switching-current. The device, consisting of a deeply depleted MOS structure controlling the conduction of a forward-based PN diode, is presented and its operation explained. TCAD simulations are used to show the effects of semiconductor parameters and bias conditions. The photodetector and its detection circuit are designed and fabricated in a 0.18 mu m CMOS process. Measurements of this new device under different biasing and illumination conditions show highly promising properties in terms of linearity, internal gain, and noise performances. (C) 2014 Optical Society of America


Published in:
Optics Express, 22, 12, 14441-14449
Year:
2014
Publisher:
Washington, Optical Society of America
ISSN:
1094-4087
Laboratories:




 Record created 2014-08-29, last modified 2018-09-13


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