000201237 001__ 201237
000201237 005__ 20181203023601.0
000201237 0247_ $$2doi$$a10.1021/nn501484e
000201237 022__ $$a1936-0851
000201237 02470 $$2ISI$$a000339463100038
000201237 037__ $$aARTICLE
000201237 245__ $$aHigh-Performance ZnO Nanowire Transistors with Aluminum Top-Gate Electrodes and Naturally Formed Hybrid Self-Assembled Monolayer/AlOx Gate Dielectric
000201237 260__ $$aWashington$$bAmer Chemical Soc$$c2014
000201237 269__ $$a2014
000201237 300__ $$a9
000201237 336__ $$aJournal Articles
000201237 520__ $$aA method for the formation of a low-temperature hybrid gate dielectric for high-performance, top-gate ZnO nanowire transistors is reported. The hybrid gate dielectric consists of a self-assembled monolayer (SAM) and an aluminum oxide layer. The thin aluminum oxide layer forms naturally and spontaneously when the aluminum gate electrode is deposited by thermal evaporation onto the SAM-covered ZnO nanowire, and its formation is facilitated by the poor surface wetting of the aluminum on the hydrophobic SAM. The hybrid gate dielectric shows excellent electrical insulation and can sustain voltages up to 6 V. ZnO nanowire transistors utilizing the hybrid gate dielectric feature a large transconductance of 50 mu S and large on-state currents of up to 200 mu A at gate-source voltages of 3 V. The large on-state current is sufficient to drive organic light-emitting diodes with an active area of 6.7 mm(2) to a brightness of 445 cd/m(2). Inverters based on ZnO nanowire transistors and thin-film carbon load resistors operate with frequencies up to 30 MHz.
000201237 6531_ $$azinc oxide
000201237 6531_ $$ananowire transistors
000201237 6531_ $$ahybrid dielectric
000201237 6531_ $$aorganic light-emitting diodes
000201237 700__ $$aKaelblein, Daniel$$uMax Planck Inst Solid State Res, D-70569 Stuttgart, Germany
000201237 700__ $$aRyu, Hyeyeon$$uMax Planck Inst Solid State Res, D-70569 Stuttgart, Germany
000201237 700__ $$aAnte, Frederik$$uMax Planck Inst Solid State Res, D-70569 Stuttgart, Germany
000201237 700__ $$aFenk, Bernhard$$uMax Planck Inst Solid State Res, D-70569 Stuttgart, Germany
000201237 700__ $$aHahn, Kersten$$uMax Planck Inst Intelligent Syst, D-70569 Stuttgart, Germany
000201237 700__ $$0240038$$aKern, Klaus$$g105546$$uMax Planck Inst Intelligent Syst, D-70569 Stuttgart, Germany
000201237 700__ $$aKlauk, Hagen$$uMax Planck Inst Solid State Res, D-70569 Stuttgart, Germany
000201237 773__ $$j8$$k7$$q6840-6848$$tAcs Nano
000201237 909C0 $$0252366$$pLSEN$$xU10152
000201237 909CO $$ooai:infoscience.tind.io:201237$$pSB$$particle
000201237 937__ $$aEPFL-ARTICLE-201237
000201237 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000201237 980__ $$aARTICLE