Wafer-fused VECSELs emitting in the 1310 nm waveband

Optically pumped wafer fused 1310 nm VECSELs have the advantage of high output power and wavelength agility. Gain mirrors in these lasers are formed by direct bonding of InAlGaAs/InP active cavities to Al(Ga) As/GaAs DBRs. We present for the first time Watt-level 1310 nm wafer-fused VCSELs based on gain mirrors with heat dissipation in the "flip-chip" configuration. Even though output power levels in this approach is lower than with intra-cavity diamond heat-spreaders, the "flip-chip configuration demonstrates higher quality optical emission and is preferable for industrial applications in optical amplifiers, intra-cavity doubled lasers, etc.


Editor(s):
Moloney, Jv
Published in:
Vertical External Cavity Surface Emitting Lasers (Vecsels) Iv, 8966
Presented at:
Conference on Vertical External Cavity Surface Emitting Lasers (VECSELs) IV, San Francisco, CA, FEB 02-04, 2014
Year:
2014
Publisher:
Bellingham, Spie-Int Soc Optical Engineering
ISSN:
0277-786X
ISBN:
978-0-8194-9879-3
Keywords:
Laboratories:




 Record created 2014-06-23, last modified 2018-09-13


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