A Circuit Synthesis Flow for Controllable-Polarity Transistors

Double-Gate (DG) controllable-polarity Field-Effect Transistors (FETs) are devices whose n- or p- polarity is on-line configurable by adjusting the second gate voltage. Such emerging transistors have been fabricated in silicon nanowires, carbon nanotuges and graphene technologies. Thanks to their enhanced functionality, DG controllable-polarity FETs implement arith- metic functions, such as XOR and MAJ, with limited physical resources enabling compact and high-performance datapaths. In order to design digital circuits with this technology, automated design techniques are of paramount importance. In this paper, we describe a design automation framework for DG controllable- polarity transistors. First, we present a novel dedicated logic representation form capable to exploit the polarity control during logic synthesis. Then, we tackle challenges at the physical level, presenting a regular layout technique that alleviates the interconnection issue deriving from the second gate routing. We use logic and physical synthesis tools to form a complete design automation flow. Experimental results show that the proposed flow is able to reduce the area and delay of digital circuits, based on 22-nm DG controllable-polarity SiNWFETs, by 22% and 42%, respectively, as compared to a commercial synthesis tool. With respect to a 22-nm FinFET technology, the proposed flow produces circuits, based on 22-nm DG controllable-polarity SiNWFETs, with 2.9x smaller area-delay product.

Published in:
IEEE Transactions on Nanotechnology, 13, 6, 1074-1083
Piscataway, Institute of Electrical and Electronics Engineers

 Record created 2014-05-06, last modified 2019-03-16

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