000198644 001__ 198644
000198644 005__ 20180913062507.0
000198644 0247_ $$2doi$$a10.1002/adfm.201302352
000198644 022__ $$a1616-301X
000198644 02470 $$2ISI$$a000332927700013
000198644 037__ $$aARTICLE
000198644 245__ $$aThe Role of Insulating Oxides in Blocking the Charge Carrier Recombination in Dye- Sensitized Solar Cells
000198644 260__ $$aWeinheim$$bWiley-Blackwell$$c2014
000198644 269__ $$a2014
000198644 300__ $$a9
000198644 336__ $$aJournal Articles
000198644 520__ $$aElectron recombination is one of the major loss factors in dye-sensitized solar cells (DSC), especially, with single electron outer sphere redox shuttle electrolyte. Insulating sub-nanometer oxide tunneling layers deposited by atomic layer deposition (ALD) are known to block the electron recombination, thereby leading to an increase in the open-circuit potential and the collection efficiency of the solar cell. A general perception in the DSC community is that any insulating oxide layer can block the recombination. However, in this work, it is unraveled that the insulating property of oxides alone is not sufficient. In addition, the properties such as the conduction band position and the oxidation state of the insulating oxide, the electronic structural modification induced to the underlying TiO2 mesoporous film, modification of surface charges (isoelectric point) and charge of the electrolyte species have to be considered. A complete photovoltaic study is done by depositing different cycles (by ALD) of four different insulating oxides (Ga2O3, ZrO2, Nb2O5, and Ta2O5) and their recombination characteristics, surface electronic properties, transport rate, and injection dynamics are investigated with a standard organic dye and Co2+/Co3+ redox mediator. A comparison is made with the conventional iodide/triiodide electrolyte.
000198644 6531_ $$adye-sensitized solar cells
000198644 6531_ $$atunneling layers
000198644 6531_ $$ablocking layers
000198644 6531_ $$aelectron recombination
000198644 6531_ $$acobalt electrolytes
000198644 700__ $$0243915$$aChandiran, Aravind Kumar$$g192134
000198644 700__ $$0240422$$aNazeeruddin, Mohammad K.$$g105958
000198644 700__ $$0240191$$aGraetzel, Michael$$g105292
000198644 773__ $$j24$$k11$$q1615-1623$$tAdvanced Functional Materials
000198644 909C0 $$0252060$$pLPI$$xU10101
000198644 909CO $$ooai:infoscience.tind.io:198644$$pSB$$particle
000198644 917Z8 $$x105528
000198644 937__ $$aEPFL-ARTICLE-198644
000198644 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000198644 980__ $$aARTICLE