Silicon heterojunction solar cell with passivated hole selective MoOx contact

We explore substoichiometric molybdenum trioxide (MoOx, x < 3) as a dopant-free, hole-selective contact for silicon solar cells. Using an intrinsic hydrogenated amorphous silicon passivation layer between the oxide and the silicon absorber, we demonstrate a high open-circuit voltage of 711 mV and power conversion efficiency of 18.8%. Due to the wide band gap of MoOx, we observe a substantial gain in photocurrent of 1.9 mA/cm(2) in the ultraviolet and visible part of the solar spectrum, when compared to a p-type amorphous silicon emitter of a traditional silicon heterojunction cell. Our results emphasize the strong potential for oxides as carrier selective heterojunction partners to inorganic semiconductors. (C) 2014 AIP Publishing LLC.


Publié dans:
Applied Physics Letters, 104, 11
Année
2014
Publisher:
Melville, American Institute of Physics
ISSN:
0003-6951
Note:
IMT-NE Number : 763
Laboratoires:


Note: Le statut de ce fichier est: Seulement EPFL


 Notice créée le 2014-05-02, modifiée le 2018-09-13

Publisher's version:
Télécharger le document
PDF

Évaluer ce document:

Rate this document:
1
2
3
 
(Pas encore évalué)