000198584 001__ 198584
000198584 005__ 20181203023502.0
000198584 0247_ $$2doi$$a10.1109/Ted.2014.2306422
000198584 022__ $$a0018-9383
000198584 02470 $$2ISI$$a000333464000009
000198584 037__ $$aARTICLE
000198584 245__ $$aA Conjoined Electron and Thermal Transport Study of Thermal Degradation Induced During Normal Operation of Multigate Transistors
000198584 260__ $$bIeee-Inst Electrical Electronics Engineers Inc$$c2014$$aPiscataway
000198584 269__ $$a2014
000198584 300__ $$a8
000198584 336__ $$aJournal Articles
000198584 520__ $$aA 3-D full-band particle Monte Carlo (MC) simulator, with full electron and phonon dispersion and a 2-D quantum correction is self-consistently coupled to a phonon MC simulator. The coupling entails feeding the phonon data obtained from the 3-D electrical MC to the phonon MC. The phonon MC reciprocates by providing the resulting spatial temperature map, which is used in the electron MC, with temperature-dependent scattering table, in a self-consistent manner. A key feature of our model is its ability to delineate the influence of the various phonon modes on the electronic transport through the application of anharmonic phonon decay and full phonon dispersion. The electrothermal simulator developed is utilized to assess the performance of silicon-on-insulator (SoI) multigate (MG) MOSFET with nanoscale cross sections. This paper shows that the hotspot in inversion mode SoI MG MOSFET with 20-nm gate length permeates into the channel as the cross section is reduced (covering similar to 50% of the channel for the 5 nm x 5 nm cross section). Furthermore, cross-sectional scaling, a key design rule to mitigate short-channel effects, degenerates device performance well beyond the ideal current gain limits of MG MOSFET architecture of double-gate, trigate, and gate-all-around MOSFET. Consequently, at the sub-20-nm scale adding more gate does not necessarily improve performance.
000198584 6531_ $$aCoupled electrothermal simulation
000198584 6531_ $$aelectron transport
000198584 6531_ $$aphonon transport
000198584 6531_ $$aquantum correction
000198584 6531_ $$aself-heating
000198584 6531_ $$asilicon-on-insulator (SoI) multigate (MG)
000198584 700__ $$uUniv Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA$$aMohamed, Mohamed
000198584 700__ $$uUniv Massachusetts, Dept Elect & Comp Engn, Amherst, MA 01003 USA$$aAksamija, Zlatan
000198584 700__ $$aVitale, Wolfgang
000198584 700__ $$uUniv Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA$$aHassan, Fawad
000198584 700__ $$uUniv Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA$$aPark, Kyeong-Hyun
000198584 700__ $$uUniv Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA$$aRavaioli, Umberto
000198584 773__ $$j61$$tIeee Transactions On Electron Devices$$k4$$q976-983
000198584 909C0 $$xU10318$$0252445$$pIEL
000198584 909CO $$pSTI$$particle$$ooai:infoscience.tind.io:198584
000198584 937__ $$aEPFL-ARTICLE-198584
000198584 973__ $$rREVIEWED$$sPUBLISHED$$aEPFL
000198584 980__ $$aARTICLE