Conformal Mapping Based DC Current Model For Double Gate Tunnel FETs

In this work, the conformal mapping technique is applied to obtain an analytical closed form solution of the 2D Poisson’s equation for a double-gate Tunnel FET. The generated band profiles are accurate in all regions of device operation. Furthermore, the current levels are estimated by implementing the non-local band-to-band tunneling model from Synopsys Sentaurus TCAD. A good agreement with simulations for varying device parameters is demonstrated and the advantages and limitations of the new modeling approach are investigated and discussed.


Published in:
Proceedings of the 15th International Conference on Ultimate Integration on Silicon (ULIS), 85 - 88
Presented at:
15th International Conference on Ultimate Integration on Silicon (ULIS), Stockholm ,Sweden, April 7-9, 2014
Year:
2014
Publisher:
New York, IEEE
Laboratories:




 Record created 2014-04-10, last modified 2018-03-17

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