000197916 001__ 197916
000197916 005__ 20190316235903.0
000197916 0247_ $$2doi$$a10.1109/LED.2014.2329919
000197916 022__ $$a0741-3106
000197916 02470 $$2ISI$$a000341573000024
000197916 037__ $$aARTICLE
000197916 245__ $$aConfigurable Logic Gates Using Polarity Controlled Silicon Nanowire Gate-All-Around FETs
000197916 269__ $$a2014
000197916 260__ $$bInstitute of Electrical and Electronics Engineers$$c2014$$aPiscataway
000197916 300__ $$a3
000197916 336__ $$aJournal Articles
000197916 520__ $$aThis work demonstrates the first fabricated 4-transistor logic gates using polarity-configurable, gate-all- around silicon nanowire transistors. This technology enhances conventional CMOS functionality by adding the degree of free- dom of dynamic polarity control (n or p-type). In addition, devices are fabricated with low, uniform doping profiles, reducing constraints at scaled technology nodes. We demonstrate through measurements and simulations how this technology can be applied to fabricate logic gates with fewer resources than CMOS. Specifically, full-swing output XOR and NAND logic gates are demonstrated using the same physical 4-transistor circuit.
000197916 6531_ $$aambipolar transistor
000197916 6531_ $$adouble-gate
000197916 6531_ $$adual-gate
000197916 6531_ $$agate-all-around (GAA)
000197916 6531_ $$apolarity control
000197916 6531_ $$asilicon nanowire (SiNW)
000197916 6531_ $$apost-CMOS
000197916 6531_ $$atop-down fabrication
000197916 6531_ $$aXOR logic gate
000197916 700__ $$0244574$$g181371$$aDe Marchi, Michele
000197916 700__ $$0245831$$g212096$$aZhang, Jian
000197916 700__ $$aFrache, Stefano
000197916 700__ $$0242417$$g181895$$aSacchetto, Davide
000197916 700__ $$aGaillardon, Pierre-Emmanuel
000197916 700__ $$aLeblebici, Yusuf$$0240162$$g112194
000197916 700__ $$aDe Micheli, Giovanni$$g167918$$0240269
000197916 773__ $$j35$$tIEEE Electron Device Letters$$k8$$q880-882
000197916 8564_ $$uhttps://infoscience.epfl.ch/record/197916/files/06842641.pdf$$zn/a$$s1879930$$yn/a
000197916 909C0 $$xU10325$$0252051$$pLSM
000197916 909C0 $$0252283$$pLSI1$$xU11140
000197916 909CO $$qGLOBAL_SET$$pSTI$$pIC$$particle$$ooai:infoscience.tind.io:197916
000197916 917Z8 $$x112915
000197916 917Z8 $$x112915
000197916 917Z8 $$x112915
000197916 917Z8 $$x112194
000197916 917Z8 $$x112915
000197916 917Z8 $$x112915
000197916 937__ $$aEPFL-ARTICLE-197916
000197916 973__ $$rREVIEWED$$sPUBLISHED$$aEPFL
000197916 980__ $$aARTICLE