000197068 001__ 197068
000197068 005__ 20180913062403.0
000197068 0247_ $$2doi$$a10.1063/1.4867527
000197068 022__ $$a0003-6951
000197068 02470 $$2ISI$$a000332729200045
000197068 037__ $$aARTICLE
000197068 245__ $$aInvestigation of Tunnel Field-Effect Transistors as a Capacitor-less Memory Cell
000197068 260__ $$aMelville$$bAmerican Institute of Physics$$c2014
000197068 269__ $$a2014
000197068 300__ $$a4
000197068 336__ $$aJournal Articles
000197068 520__ $$aIn this work we report experimental results on the use of Tunnel Field-Effect Transistors (TFET) as capacitorless Dynamic Random Access Memory (DRAM) cells, implemented as a double-gate (DG) Fully-Depleted Silicon-On-Insulator (FD-SOI) devices. The devices have an asymmetric design, with a partial overlap of the top gate (LG) with a total overlap of the back gate over the channel region (LG+LIN). A potential well is created by biasing the back gate (VBG) in accumulation while the front gate (VFG) is in inversion. Holes from the p+ source are injected by the forward-biased p+i junction and stored in the electrically induced potential well.
000197068 6531_ $$aTunnel FET
000197068 6531_ $$aCapacitorless memory
000197068 6531_ $$aDRAM
000197068 6531_ $$a1 Transistor memory
000197068 700__ $$0244769$$aBiswas, Arnab$$g198278
000197068 700__ $$0242451$$aDagtekin, Nilay$$g180951
000197068 700__ $$0244768$$aGrabinski, Wladyslaw$$g123873
000197068 700__ $$0242727$$aBazigos, Antonios$$g199069
000197068 700__ $$aRoyer, Cyrille Le
000197068 700__ $$aHartmann, Jean-Michel
000197068 700__ $$aTabone, Claude
000197068 700__ $$aVinet, Maud
000197068 700__ $$0241430$$aIonescu, Mihai Adrian$$g122431
000197068 773__ $$j104$$k9$$q092108$$tApplied Physics Letters
000197068 8564_ $$uhttp://scitation.aip.org/content/aip/journal/apl/104/9/10.1063/1.4867527$$zURL
000197068 909C0 $$0252177$$pNANOLAB$$xU10328
000197068 909CO $$ooai:infoscience.tind.io:197068$$pSTI$$particle
000197068 917Z8 $$x198278
000197068 917Z8 $$x198278
000197068 917Z8 $$x198278
000197068 937__ $$aEPFL-ARTICLE-197068
000197068 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000197068 980__ $$aARTICLE