Functionalized 3D 7x20-array of vertically stacked SiNW FET for streptavidin sensing

A 3D, vertically stacked silicon nanowire (SiNW) field effect transistor (FET) featuring a high density array (7×20) of fully depleted channels has been successfully fabricated by a CMOS compatible process on silicon on insulator (SOI) and functionalized for streptavidin detection for the first time. The channels are surrounded by conformal high-κ gate dielectrics (HfO2), and their conductivity can be uniquely tuned by three gates; a backgate (BG) and two symmetrical Pt side gates (SG) through a liquid, offering unique sensitivity tuning with high gate coupling (SS=75 mV/dec, α'=SS60mV/dec/SSmeasured=0.8, with highest sensitivity=93-99%, obtained for I=1 0pA-10nA, in weak inversion) ever published. © 2013 IEEE.


Published in:
71st Device Research Conference, 1-2
Presented at:
2013 71st Annual Device Research Conference (DRC), Notre Dame, IN, USA, 23-26 06 2013
Year:
2013
Publisher:
IEEE
Laboratories:




 Record created 2014-01-21, last modified 2018-09-13


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