000196217 001__ 196217
000196217 005__ 20180913062335.0
000196217 0247_ $$2doi$$a10.1016/j.mee.2012.03.017
000196217 022__ $$a0167-9317
000196217 02470 $$2ISI$$a000309316300082
000196217 037__ $$aARTICLE
000196217 245__ $$aVertically stacked Si nanostructures for biosensing applications
000196217 260__ $$bElsevier$$c2012
000196217 269__ $$a2012
000196217 336__ $$aJournal Articles
000196217 520__ $$aHigh density (7-10 NW/μm) SiNW arrays of up to 16 nanowires vertically stacked with diameter widths below 20 nm have been successfully fabricated to create highly sensitive 3D FETs for biosensing applications. In order to take advantage of the increased sensing surface area that nanoscale 3D devices offer and improve the mechanical characteristics of the suspended sensing channels, fin-type structures (height/width ratio >1) are also being investigated. The vertical stacking allows higher utilization of the bulk Si. Higher output currents are expected as the number of conduction channels increases. 3D TCAD simulations have been done for up to three channels to investigate different device characteristics to achieve high sensitivities. Both NWs and Fins have been found to offer very high sensitivities through simulations especially for short (2 μm) channels, low channel doping concentrations (boron: 10 15 cm -3), and thin structures (width <30 nm) when applying an external sensing gate potential variation of ΔΨ = 90 mV. © 2012 Elsevier B.V. All rights reserved.
000196217 700__ $$aBuitrago, Elizabeth
000196217 700__ $$aFernández-Bolaños, M.
000196217 700__ $$0241430$$aIonescu, A. M.$$g122431
000196217 773__ $$j97$$q345-348$$tMicroelectronic Engineering
000196217 909C0 $$0252177$$pNANOLAB$$xU10328
000196217 909CO $$ooai:infoscience.tind.io:196217$$pSTI$$particle
000196217 917Z8 $$x206855
000196217 917Z8 $$x249835
000196217 937__ $$aEPFL-ARTICLE-196217
000196217 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000196217 980__ $$aARTICLE