Electrical transport in C-doped GaAs nanowires: surface effects
Casadei, Alberto; Schwender, Jil; Russo-Averchi, Eleonora; Rueffer, Daniel; Heiss, Martin; Alarco-Llado, Esther; Jabeen, Fauzia; Ramezani, Mohammad; Nielsch, Kornelius; Fontcuberta I. Morral, Anna
2013

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Abstract

The resistivity and mobility of carbon-doped GaAs nanowires have been studied for different doping concentrations. Surface effects have been evaluated by comparing unpassivated with passivated nanowires. We directly see the influence of the surface: the pinning of the Fermi level and the consequent existence of a depletion region lead to an increase of the mobility up to 30 cm(2)/Vs for doping concentrations lower than 3 x 10(18) cm(-3). Electron beam induced current measurements show that the minority carrier diffusion path can be as high as 190 nm for passivated nanowires. ((c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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Title Electrical transport in C-doped GaAs nanowires: surface effects
Author(s) Casadei, Alberto ; Schwender, Jil ; Russo-Averchi, Eleonora ; Rueffer, Daniel ; Heiss, Martin ; Alarco-Llado, Esther ; Jabeen, Fauzia ; Ramezani, Mohammad ; Nielsch, Kornelius ; Fontcuberta I. Morral, Anna
Published in Physica Status Solidi-Rapid Research Letters
Pagination 4
Volume 7
Issue 10
Pages 890-893
Date 2013
Publisher Weinheim, Wiley-Blackwell
ISSN 1862-6254
Keywords
DOI https://doi.org/10.1002/pssr.201307162
Other identifier(s) View record in Web of Science
Laboratories LMSC
Record Appears in Scientific production and competences > STI - School of Engineering > IMX - Institute of Materials > LMSC - Laboratory of Semiconductor Materials
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date 2014-01-09

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