Explicit drain current model of junctionless double-gate field-effect transistors

This paper presents an explicit drain current model for the junctionless double-gate metal-oxide-semiconductor field-effect transistor. Analytical relationships for the channel charge densities and for the drain current are derived as explicit functions of applied terminal voltages and structural parameters. The model is validated with 2D numerical simulations for a large range of channel thicknesses and is found to be very accurate for doping densities exceeding 10(18) cm(-3), which are actually used for such devices. (C) 2013 Elsevier Ltd. All rights reserved.


Published in:
Solid-State Electronics, 89, 134-138
Year:
2013
Publisher:
Oxford, Pergamon-Elsevier Science Ltd
ISSN:
0038-1101
Keywords:
Laboratories:




 Record created 2014-01-09, last modified 2018-09-13


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