The small-molecule organic semiconductor 2,9-di-decyl-dinaphtho-[2,3-b: 2',3'-f]-thieno[3,2-b]-thiophene (C-10-DNTT) was used to fabricate bottom-gate, top-contact thin-film transistors (TFTs) in which the semiconductor layer was prepared either by vacuum deposition or by solution shearing. The maximum effective charge-carrier mobility of TFTs with vacuum-deposited C-10-DNTT is 8.5 cm(2)/V s for a nominal semiconductor thickness of 10 nm and a substrate temperature during the semiconductor deposition of 80 degrees C. Scanning electron microscopy analysis reveals the growth of small, isolated islands that begin to coalesce into a flat conducting layer when the nominal thickness exceeds 4 nm. The morphology of the vacuum-deposited semiconductor layers is dominated by tall lamellae that are formed during the deposition, except at very high substrate temperatures. Atomic force microscopy and X-ray diffraction measurements indicate that the C-10-DNTT molecules stand approximately upright with respect to the substrate surface, both in the flat conducting layer near the surface and within the lamellae. Using the transmission line method on TFTs with channel lengths ranging from 10 to 100 mu m, a relatively small contact resistance of 0.33 k Omega cm was determined. TFTs with the C-10-DNTT layer prepared by solution shearing exhibit a pronounced anisotropy of the electrical performance: TFTs with the channel oriented parallel to the shearing direction have an average carrier mobility of (2.8 +/- 0.3) cm(2)/V s, while TFTs with the channel oriented perpendicular to the shearing direction have a somewhat smaller average mobility of (1.3 +/- 0.1) cm(2)/V s. (C) 2013 Elsevier B.V. All rights reserved.