000195212 001__ 195212
000195212 005__ 20190331192652.0
000195212 02470 $$2ISI$$a000327183000210
000195212 0247_ $$2doi$$a10.1109/NEMS.2013.6559887
000195212 037__ $$aCONF
000195212 245__ $$aHigh aspect ratio etching of nanopores in PECVD SiC through AAO mask
000195212 269__ $$a2013
000195212 260__ $$bIEEE$$c2013
000195212 336__ $$aConference Papers
000195212 520__ $$aWe present in this work the fabrication of high aspect ratio nanopores in 500 nm PECVD SiC films through AAO (anodic aluminum oxide) mask. The initial AAO thin film is 180 nm thick and the diameter of nanopores is 33 ± 7 nm. We have used three plasma chemistries: CF4, Cl2 /Ar, and SF6/O2 to study the pattern transfer process into SiC at sub-50 nm scale by deep reactive ion etching. CF4 and Cl2/Ar etchings show highly anisotropic features. Vertical pores with similar diameter as the AAO mask (33 ± 12 nm) and as deep as 400 nm (aspect ratio > 10) can be achieved by CF4 reactant. As comparison, SF6 /O2 chemistry generates very different etching profiles, causing trenches both in vertical and lateral directions. Our PECVD SiC nanopores are promising candidates for robust biosensing and nanofiltration applications.
000195212 6531_ $$aPECVD SiC
000195212 6531_ $$aNanopore
000195212 6531_ $$aAAO
000195212 700__ $$0245976$$aWu, Songmei$$g201009
000195212 700__ $$aBammatter, Marc-Oliver
000195212 700__ $$aTang, Wei
000195212 700__ $$0245975$$aAuzelyte, Vaida$$g199500
000195212 700__ $$aZhang, Hai Xia
000195212 700__ $$0240120$$aBrugger, Jürgen$$g145781
000195212 7112_ $$a8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems$$cSuzhou, China$$dApril 7-10, 2013
000195212 773__ $$q986-989$$tProceedings of the 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems
000195212 909C0 $$0252040$$pLMIS1$$xU10321
000195212 909CO $$ooai:infoscience.tind.io:195212$$pconf$$pSTI
000195212 917Z8 $$x201009
000195212 937__ $$aEPFL-CONF-195212
000195212 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000195212 980__ $$aCONF