Femto-Molar Sensitive Field Effect Transistor Biosensors Based on Silicon Nanowires and Antibodies

This article presents electrically-based sensors made of high quality silicon nanowire field effect transistors (SiNW- FETs) for high sensitive detection of vascular endothelial growth factor (VEGF) molecules. SiNW-FET devices, fabricated through an IC/CMOS compatible top-down approach, are covalently functionalized with VEGF monoclonal antibodies in order to sense VEGF. Increasing concentrations of VEGF in the femto molar range determine increasing conductance values as proof of occurring immuno-reactions at the nanowire (NW) surface. These results confirm data in literature about the possibility of sensing pathogenic factors with SiNW-FET sensors, introducing the innovating aspect of detecting biomolecules in dry conditions.


Publié dans:
Proceedings of the IEEE Sensors 2013
Présenté à:
IEEE Sensors, Baltimore, Maryland, USA, November 4-6, 2013
Année
2013
Laboratoires:




 Notice créée le 2013-12-12, modifiée le 2019-03-16

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