000191232 001__ 191232
000191232 005__ 20190316235754.0
000191232 037__ $$aCONF
000191232 245__ $$aFemto-Molar Sensitive Field Effect Transistor Biosensors Based on Silicon Nanowires and Antibodies
000191232 269__ $$a2013
000191232 260__ $$c2013
000191232 336__ $$aConference Papers
000191232 520__ $$aThis article presents electrically-based sensors made of high quality silicon nanowire field effect transistors (SiNW- FETs) for high sensitive detection of vascular endothelial growth factor (VEGF) molecules. SiNW-FET devices, fabricated through an IC/CMOS compatible top-down approach, are covalently functionalized with VEGF monoclonal antibodies in order to sense VEGF. Increasing concentrations of VEGF in the femto molar range determine increasing conductance values as proof of occurring immuno-reactions at the nanowire (NW) surface. These results confirm data in literature about the possibility of sensing pathogenic factors with SiNW-FET sensors, introducing the innovating aspect of detecting biomolecules in dry conditions.
000191232 700__ $$0246293$$g206745$$aPuppo, Francesca
000191232 700__ $$aDoucey, Marie-Agnès
000191232 700__ $$aMoh, Thomas S. Y.
000191232 700__ $$aPandraud, Grégory
000191232 700__ $$aSarro, Pasqualina M.
000191232 700__ $$0240269$$g167918$$aDe Micheli, Giovanni
000191232 700__ $$0242413$$g182237$$aCarrara, Sandro
000191232 7112_ $$dNovember 4-6, 2013$$cBaltimore, Maryland, USA$$aIEEE Sensors
000191232 773__ $$tProceedings of the IEEE Sensors 2013
000191232 8564_ $$uhttps://infoscience.epfl.ch/record/191232/files/IEEE_Sensors_2013_Puppo.pdf$$zn/a$$s526195$$yn/a
000191232 909C0 $$xU11140$$0252283$$pLSI1
000191232 909CO $$pIC$$qGLOBAL_SET$$ooai:infoscience.tind.io:191232$$pconf$$pSTI
000191232 917Z8 $$x112915
000191232 937__ $$aEPFL-CONF-191232
000191232 973__ $$rNON-REVIEWED$$sPUBLISHED$$aEPFL
000191232 980__ $$aCONF