Abstract

In this paper, we report formation of GAA buckled dual Si nanowire MOSFETs including two sub-80 nm Si cores on bulk Si using 0.8 mu m optical lithography and local oxidation for the first time. 0.833 GPa uniaxial tensile stress is measured in the buckled suspended dual Si nanowires using micro-Raman spectroscopy. The array of GAA buckled dual Si nanowire MOSFETs at V-DS = 50 mV shows 64 mV/dec. subthreshold slope and 61% stress-based low-field electron mobility enhancement in comparison to the omega-gate relaxed reference device. Finally, digital logic implementation is demonstrated using multi-gate nanowires on bulk Si. (C) 2013 Elsevier B.V. All rights reserved.

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