Charge carrier generation, relaxation, and recombination in polytypic GaAs nanowires studied by photoluminescence excitation spectroscopy
We report results of a study of polytypic GaAs nanowires using low-temperature photoluminescence excitation spectroscopy. The nanowire ensemble shows a strong absorption at 1.517 eV, as a result of resonant generation of heavy-hole excitons in the zinc-blende segments of the nanowires. Excitons then diffuse along the length of the nanowire and are trapped by the type-II quantum discs arising from the zinc-blende/ wurtzite crystal structure alternation and recombine radiatively. Finally, experiments on single nanowires demonstrate that the energy of the Gamma(7) conduction band to Gamma(9) valence band exciton of wurtzite GaAs is 1.521 eV at 4K. (C) 2013 AIP Publishing LLC.