An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices
De Michielis, L.; DağTekin, N.; Biswas, A.; Lattanzio, L.; Selmi, L.; Luisier, M.; Riel, H.; Ionescu, A. M.
2013

Abstract

In this paper, an analytical band-to-band tunneling model is proposed, validated by means of drift-diffusion simulation and comparison with experimental data, implemented in Verilog-A, and finally proven with SPICE simulator through simulation of circuits featuring tunneling diodes. The p-n junction current calculation starts from a non-local Band-to-Band tunneling theory including the electron-phonon interaction and therefore it is particularly suited for indirect semiconductor materials such as silicon-or germanium-based interband tunneling devices. (C) 2013 AIP Publishing LLC.

Details

Title An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices
Author(s) De Michielis, L. ; DağTekin, N. ; Biswas, A. ; Lattanzio, L. ; Selmi, L. ; Luisier, M. ; Riel, H. ; Ionescu, A. M.
Published in Applied Physics Letters
Pagination 5
Volume 103
Issue 12
Pages 123509
Date 2013
Publisher Melville, American Institute of Physics
ISSN 0003-6951
DOI https://doi.org/10.1063/1.4821100
Other identifier(s) View record in Web of Science
Laboratories NANOLAB
Record Appears in Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > NANOLAB - Nanoelectronic Devices Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date 2013-10-29

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