An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices

In this paper, an analytical band-to-band tunneling model is proposed, validated by means of drift-diffusion simulation and comparison with experimental data, implemented in Verilog-A, and finally proven with SPICE simulator through simulation of circuits featuring tunneling diodes. The p-n junction current calculation starts from a non-local Band-to-Band tunneling theory including the electron-phonon interaction and therefore it is particularly suited for indirect semiconductor materials such as silicon-or germanium-based interband tunneling devices. (C) 2013 AIP Publishing LLC.


Published in:
Applied Physics Letters, 103, 12, 123509
Year:
2013
Publisher:
Melville, American Institute of Physics
ISSN:
0003-6951
Laboratories:




 Record created 2013-10-29, last modified 2018-09-13


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