000190018 001__ 190018
000190018 005__ 20180913062123.0
000190018 013__ $$aUS2014332079$$bUS$$cA1$$d20141113
000190018 013__ $$aCN104106118$$bCN$$cA$$d20141015
000190018 013__ $$aEP2788995$$bEP$$cA1$$d20141015
000190018 013__ $$aWO2013084029$$bWO$$cA1$$d20130613
000190018 02470 $$2EPO Family ID$$a45464022
000190018 02470 $$2TTO$$a5.0033
000190018 037__ $$aPATENT
000190018 245__ $$aSemiconductor electrode comprising a blocking layer
000190018 260__ $$c2013
000190018 269__ $$a2013
000190018 336__ $$aPatents
000190018 520__ $$aThe present invention provides a porous semiconductor electrode passivated by way of a layer applied by an atomic layer deposition (ALD) process. The semiconductor electrode can be advantageously used in dye-sensitized solar cells (DSCs) having increase open current voltages (Voc). By selecting the thickness and the material of the passivating or blocking layer, high Voc without substantial reduction of short circuit current (JSC) is achieved, thereby resulting in devices exhibiting excellent power conversion efficiencies.
000190018 6531_ $$adye-sensitized solar cell
000190018 6531_ $$aatomic layer deposition
000190018 6531_ $$aelectron recombination
000190018 6531_ $$ablocking layer
000190018 6531_ $$asolar cell
000190018 6531_ $$agallium oxide
000190018 6531_ $$atunneling layer
000190018 700__ $$0243915$$aChandiran, Aravind Kumar$$g192134
000190018 700__ $$0240422$$aNazeeruddin, Mohammad Khaja$$g105958
000190018 700__ $$0240191$$aGraetzel, Michael$$g105292
000190018 8564_ $$uhttp://patentscope.wipo.int/search/en/detail.jsf?docId=WO2013084029&recNum=165&docAn=IB2011055550&queryString=solar&maxRec=222540$$zURL
000190018 909C0 $$0252060$$pLPI$$xU10101
000190018 909C0 $$0252085$$pTTO$$xU10021
000190018 909CO $$ooai:infoscience.tind.io:190018$$pSB
000190018 917Z8 $$x192134
000190018 937__ $$aEPFL-PATENT-190018
000190018 973__ $$aEPFL
000190018 980__ $$aPATENT