A novel ultra low-energy sub-threshold inverter based on nanoscale Field Effect Diode

A novel sub-threshold inverter based on nanoscale Field Effect Diode (FED) and a basic static CMOS inverter are investigated in this paper. Simulation results demonstrate that power consumption and Power Delay Product (PDP) of the sub-threshold inverter which is designed with nanoscale FED are 57.9% and 18.21% less than these factors in a comparable CMOS sub-threshold inverter. So the nanoscale FED scheme can provide better power efficiency than standard sub-threshold CMOS inverters.


Published in:
IEICE Electronics Express, 7, 13, 906-912
Year:
2010
ISSN:
1349-2543
Laboratories:




 Record created 2013-10-19, last modified 2018-09-13


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