Trans-Capacitance Modeling in Junctionless Symmetric Double Gate MOSFETs

We have developed a closed-form solution for trans-capacitances in long-channel Junctionless Double Gate MOSFET. This approach, which is derived from a coherent charge-based model, was fully validated with Technology Computer Aided Design simulations. According to this work, a complete intrinsic capacitance network is obtained, which represents an essential step towards AC analysis of circuits based on junctionless devices.


Publié dans:
IEEE Transactions on Electron Devices, 60, 12, 4034-4040
Année
2013
Publisher:
Piscataway, Institute of Electrical and Electronics Engineers
ISSN:
0018-9383
Mots-clefs:
Laboratoires:




 Notice créée le 2013-10-18, modifiée le 2018-09-13


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