Electrical contacts to single nanowires: a scalable method allowing multiple devices on a chip. Application to a single nanowire radial p-i-n junction

Semiconductor nanowires are currently at the forefront of research in the areas of nanoelectronics and energy conversion. In all these studies, realising electrical contacts and statistically relevant measurements is a key issue. We propose a method that enables to contact hundreds of nanowires on a single wafer in an extremely fast electron beam lithography session. The method is applied to nanowire-based radial GaAs p-i-n junction. Current-voltage characteristics are shown, along with scanning photocurrent mapping.


Published in:
International Journal Of Nanotechnology, 10, 5-7, 419-432
Year:
2013
Publisher:
Geneva, Inderscience
ISSN:
1475-7435
Keywords:
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 Record created 2013-10-01, last modified 2018-03-17

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